Defects in HIgh-k Gate Dielectric Stacks

HIGH-K TECHNOLOGY. PVD-High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-state Drive Current; M. Niwa et al.- Extremely High Density Capacitors with ALD High-k Dielectric Layers; J. Klootwijk et al.- Towards Understanding of Processing-nanostructure-property Inter-relationships in High-k/Metal Gate Stacks; P.Majhi et al.- DEFECTS IN HIGH-K DIELECTRICS: CHARACTERIZATION. On the Characterization of Electronically Active Defects in High-k Gate Dielectrics; D.A. Buchanan and D. Felnhofer.- Inelastic Electron Tunnelling Spectroscopy (IETS) Study of High-k Dielectrics; T.P. Ma et al.- Characterization and Modeling of Defects in High-k Layers Through Fast Electrical Transient Measurements; J. Mitard et al.- Characterization of Electrically Active Defects in High-k Gate Dielectrics Using Charge Pumping; E. M. Vogel and D. W. Heh.- Impact of High-k Properties on MOSFET Electrical Characteristics; L. Pantisano et al.- HIGH-K PROCESSING AND DEFECTS. Structural Evolution and Point Defects in Metal Oxide-based High-k Gate Dielectrics; P. C. McIntyre et al.- Disordered Structure and Density of Gap States in High-Permittivity Thin Solid Films; K. Kukli et al.- Interdiffusion Studies of High-k Gate Dielectric Stack Constituents; P. Sivasubramiani et al.- XPS/LEIS Study of High-k Rare Earth (Lu, Yb) Oxides and Silicates on Si: The Effect of Annealing on Microstructure Evolution; A.Zenkevich et al.- Transient Charging Effects and Its Implications to The Reliability of High-k Dielectrics; B. H. Lee et al.- HIGH-K HEORY. Defect Energy Levels in High-k Gate Oxides; J. Robertson et al.- Defect-related Issues in High-k Dielectrics; S. T. Pantelides et al.- Studying The Effects of Nitrogen and Hafnium Incorporation into The SiO2/Si(100) Interface with Replica-exchange Molecular Dynamics and Density-Functional-Theory Calculations; W. Androni et al.- ELECTRICALLY ACTIVE DEFECTS. Probing Point Defects and Traps in Stacks of Ultrathin Hafnium Oxides on (100)Si by Electron Spin Resonance: Interfaces and N Incorporation; A. Stesmans and V. V. Afanas’ev.- Mechanism of Charge Trapping Reduction in Scaled High-k Gate Stacks; G. Bersuker et al.- Electrically Active Interface and Bulk Semiconductor Defects in High-k / Germanium Structures; A. Dimoulas.- Defect and Composition Analysis of As-deposited and Nitrided (100)Si / SiO2/ Hf1-xSixO2 Stacks by Electron Paramagnetic Resonance and Ion Beam Analysis; H. J. von Bardeleben et al.- Defects at The High-k /Semiconductor Interfaces Investigated By Spin Dependent Spectroscopies; M. Fanciulli et al.- Fixed Oxide Charge in Ru-based Chemical Vapour Deposited High-k Gate Stacks; K. Frohlich et al.- Electrical Defects in Atomic Layer Deposited HfO2 Films on Silicon: Influence of Precursor Chemistries and Substrate Treatment; S. Dueñas et al.- The Effects of Radiation and Charge Trapping on The Reliability of Alternative Gate Dielectrics; J. A. Felix et al.- Can LEIS Spectra Contain Information on Surface Electronic Structure of High-k Dielectrics; Yu. Lebedinskii et al.- Low Substrate Damage High-k Removal After Gate Patterning; D. Shamiryan et al.- Monitoring of Fermi Level Variations at Metal/High-k Interfaces with in situ X-ray Photoelectron Spectroscopy; Yu. Lebedinskii et al.- INTERFACES. Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High-k Materials on Silicon; T. Gustafsson et al.- Interface Formation During Epitaxial Growth of Binary Metal Oxides on Silicon; H. J. Osten et al.- Chemical Environment and Strain on Oxygen Vacancy Formation Energies at Silicon-Silicon Oxide Interfaces; T.M. Henderson.- Dielectric and Infrared Properties of Ultrathin SiO2 Layers on Si (100); F. Giustino and A. Pasquarello.- The (1 0 0) Surface of Semiconductor Silicon (in Practical Conditions). Preparation, Evolution, Passivation;