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Serie: Computational microelectronics
GebondenEngels9783211825396
1-8-1994
Reviews the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. This book focuses on boundary conditions for semiconductor device simulation. Meer
GebondenEngels9783211825044
1-8-1993
Presents the research and development results in the area of numerical process and device simulation. This book covers the following topics: process simulation and equipment modeling, device modeling and simulation of complex structures, device simulation and parameter extraction for circuit models, integration of process, algorithms and software. Meer
paperbackEngels9783211999370
19-10-2010
In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. Meer
gebondenEngels9783211835586
29-6-2001
Single-electronics is a fascinating technology which reveals new physical effects of charge transport. It has many benefits and great figure of merits but also several open challenges waiting for elegant solutions . Meer
gebondenEngels9783211013618
5-6-2003
This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. Meer
gebondenEngels9783211821107
30-10-1989
The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. Meer
gebondenEngels9783211830529
7-7-1998
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Meer
gebondenEngels9783211818923
12-12-1985
In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. Meer
gebondenEngels9783211405376
18-12-2003
Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. Meer
gebondenEngels9783211206874
2-6-2004
Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Meer
paperbackEngels9783709171936
22-12-2012
Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. Meer
paperbackEngels9783709173213
3-10-2013
Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabrication techniques similar to those for standard integrated circuits (ICs). Meer
paperbackEngels9783709173343
21-10-2012
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Meer
paperbackEngels9783709190975
30-12-2011
To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. Meer
gebondenEngels9783709107775
31-7-2011
The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. Meer
paperbackEngels9783709119334
23-8-2016
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. Meer
paperbackEngels9783709172261
5-9-2012
This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. Meer
paperbackEngels9783709172049
1-11-2012
Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Meer
paperbackEngels9783709190456
12-2-2012
During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Meer
paperbackEngels9783709192498
22-1-2012
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Meer